| 发明名称 |
PLASMA OXIDATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A silicon oxide film is formed by performing a plasma oxidation process comprising a step for performing a first plasma oxidation on a structure having a silicon layer and a high-melting-point metal-containing layer by using a processing gas containing at least a hydrogen gas and an oxygen gas at a processing pressure of 1.33-66.67 Pa, and a step for performing a second plasma oxidation after the first plasma oxidation by using a processing gas containing at least a hydrogen gas and an oxygen gas at a processing pressure of 133.3-1333 Pa.</p> |
| 申请公布号 |
WO2007099922(A1) |
申请公布日期 |
2007.09.07 |
| 申请号 |
WO2007JP53561 |
申请日期 |
2007.02.27 |
| 申请人 |
TOKYO ELECTRON LIMITED;SASAKI, MASARU |
发明人 |
SASAKI, MASARU |
| 分类号 |
H01L21/316;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/316 |
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