CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A stripping composition used after chemical mechanical polishing is provided to remove contaminants from a wafer surface after chemical mechanical polishing of the wafer while causing no corrosion of a metal interconnection, and to produce a high-quality semiconductor device with no impurities. A stripping composition used after chemical mechanical polishing comprises: (A) organic polymer particles having a crosslinked structure; and (B) a surfactant. Particularly, the organic polymer particles having a crosslinked structure has at least one functional group selected from the group consisting of carboxyl, hydroxyl, amino, sulfonate and -N+R3 groups (wherein R represents H or a C1-C4 alkyl group).