NONVOLATILE MEMORY DEVICE COMPOSING ONE SWITCHING DEVICE AND ONE RESISTANT MATERIAL

摘要

A nonvolatile memory device including one switching device and one resistor is provided to reduce fabrication cost of the product by enabling mass production using the conventional DRAM process, and to prevent memory characteristics of the resistor from being influenced by integration density. A nonvolatile memory device includes a substrate and a transistor formed on the substrate. A data storage part is connected to a drain of the transistor. The data storage part includes a data storage material layer which has different resistance characteristics on different voltage regions, especially first resistance indicating a first data state when a write voltage is applied and second resistance different from the first resistance and indicating a second data state when a write voltage is applied. The first and the second data state are read by applying a read voltage which does not change a data state of the data storage material layer.