发明名称 |
METHOD OF PROCESSING SUBSTRATE AND CHEMICAL USED IN THE SAME |
摘要 |
A method for processing a substrate is provided to facilitate an ashing process and a removal process if necessary by performing an exposure process twice on an organic layer pattern prior to the removal process so that the organic layer pattern becomes a thin film. At least two exposure processes are performed on a substrate in a substrate processing method including an organic layer pattern process for processing an organic layer pattern. In processing the organic layer pattern, at least a part of the organic layer pattern is shrunk or removed using chemicals. The exposure process can be performed only on the organic layer pattern included in a desired scope of the substrate.
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申请公布号 |
KR20070091077(A) |
申请公布日期 |
2007.09.07 |
申请号 |
KR20070073063 |
申请日期 |
2007.07.20 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
KIDO SHUSAKU |
分类号 |
G02F1/1333;H01L21/306;G03F7/20;G03F7/26;H01L21/00;H01L21/027;H01L21/312;H01L21/32;H01L51/40 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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