发明名称 METHOD OF PROCESSING SUBSTRATE AND CHEMICAL USED IN THE SAME
摘要 A method for processing a substrate is provided to facilitate an ashing process and a removal process if necessary by performing an exposure process twice on an organic layer pattern prior to the removal process so that the organic layer pattern becomes a thin film. At least two exposure processes are performed on a substrate in a substrate processing method including an organic layer pattern process for processing an organic layer pattern. In processing the organic layer pattern, at least a part of the organic layer pattern is shrunk or removed using chemicals. The exposure process can be performed only on the organic layer pattern included in a desired scope of the substrate.
申请公布号 KR20070091077(A) 申请公布日期 2007.09.07
申请号 KR20070073063 申请日期 2007.07.20
申请人 NEC LCD TECHNOLOGIES, LTD. 发明人 KIDO SHUSAKU
分类号 G02F1/1333;H01L21/306;G03F7/20;G03F7/26;H01L21/00;H01L21/027;H01L21/312;H01L21/32;H01L51/40 主分类号 G02F1/1333
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