SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and its fabricating method are provided to enhance a channel area and a short channel effect by reducing a leakage current flowing from a storage electrode to a body. An active region comprising a storage electrode junction region and a channel region is defined by an isolation structure(130). A recess channel region has a vertical SOI(Silicon-On-Insulator) channel structure which is formed on a sidewall of the isolation structure. A gate insulating layer(160) is formed on the substrate comprising the recess channel region. A gate electrode(165) is formed on the gate insulating layer to bury the recess channel region.