| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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| 申请公布号 |
US2007205413(A1) |
申请公布日期 |
2007.09.06 |
| 申请号 |
US20070787749 |
申请日期 |
2007.04.17 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;KOYAMA JUN |
| 分类号 |
H01L29/04;G02F1/1362;H01L21/00;H01L21/60;H01L21/77;H01L21/84;H01L23/552;H01L23/60;H01L27/12;H01L27/146;H01L29/786 |
主分类号 |
H01L29/04 |
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