发明名称 |
Multiple resist layer phase shift mask (PSM) blank and PSM formation method |
摘要 |
A PSM blank and method for forming a PSM using the PSM blank, the PSM blank including a light transmitting portion; an uppermost anti-reflection portion; a photosensitive layer stack on the anti-reflection portion comprising at least two photosensitive layers; wherein each photosensitive layer has a lower radiant energy exposure sensitivity compared to an underlying layer.
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申请公布号 |
US2007207391(A1) |
申请公布日期 |
2007.09.06 |
申请号 |
US20060369555 |
申请日期 |
2006.03.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE HSIN-CHANG;CHEN CHIA-JEN;HSIEH HONG-CHANG;YEH LEE-CHIH |
分类号 |
G03C5/00;G03F1/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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