发明名称 Multiple resist layer phase shift mask (PSM) blank and PSM formation method
摘要 A PSM blank and method for forming a PSM using the PSM blank, the PSM blank including a light transmitting portion; an uppermost anti-reflection portion; a photosensitive layer stack on the anti-reflection portion comprising at least two photosensitive layers; wherein each photosensitive layer has a lower radiant energy exposure sensitivity compared to an underlying layer.
申请公布号 US2007207391(A1) 申请公布日期 2007.09.06
申请号 US20060369555 申请日期 2006.03.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LEE HSIN-CHANG;CHEN CHIA-JEN;HSIEH HONG-CHANG;YEH LEE-CHIH
分类号 G03C5/00;G03F1/00 主分类号 G03C5/00
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