| 摘要 |
A method for fabricating a semiconductor device is provided to prevent voids from being exposed in a polishing process by forming a protruded nitride layer in a region where a bowing phenomenon occurs so that the voids are divided into upper and lower portions with respect to an insulation layer in filling a drain contact hole. A first interlayer dielectric(102), an insulation layer and a second interlayer dielectric are sequentially formed on a semiconductor substrate(100) having a predetermined structure. The second interlayer dielectric, the insulation layer and the first interlayer dielectric are etched to expose a predetermined region of the semiconductor substrate so that a contact hole is formed. A part of the insulation layer is protruded by a wet etch process. After a polysilicon layer is formed on the resultant structure to fill the contact hole, a polishing process is performed even on the insulation layer to form a contact plug in which voids are not exposed. In the polishing process, the voids formed on the insulation layer can be eliminated.
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