发明名称 RESISTANCE REGULATING METHOD FOR VARIABLE RESISTOR AND NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a resistance regulating method for a variable resistor which makes appropriate mono-polar switching, based on the forming voltage pulse applying conditions to bring a variable resistor element of two terminal structure into a variable resistance state of making mono-polar switching. <P>SOLUTION: In a forming process, a variable resistor element capable of stabilized mono-polar switching using the variable resistance property as the erasing resistance property is formed by making the variable resistance property of a variable resistor element in the initial state after manufacturing into the writing resistance property by applying writing pulses of a first pulse applying period to a variable resistor element for writing resistance property and by applying erasing voltage pulses of the same polarity as the writing voltage pulse of the second pulse applying period longer than the first pulse applying period. In the forming process, a plurality of forming voltage pulses in the same polarity as the writing voltage pulse is applied to the variable resistor element in the third pulse applying period longer than the second pulse applying period. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007226883(A) 申请公布日期 2007.09.06
申请号 JP20060046234 申请日期 2006.02.23
申请人 SHARP CORP 发明人 MORIMOTO HIDENORI
分类号 G11C13/00;H01L27/10 主分类号 G11C13/00
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