SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including an n-channel and a p-channel transistors which is improved in performance by using stress.

SOLUTION: The semiconductor device comprises a semiconductor substrate formed of a first semiconductor material; an n-channel field effect transistor including an n-type source/drain region which is formed of a second semiconductor material different from the first one and is formed in the semiconductor substrate; and a p-channel field effect transistor including a p-type source/drain region which is formed of a third semiconductor material different from the first one, and is formed in the semiconductor substrate. The second and third semiconductor materials are different materials.

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