| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output semiconductor laser device that suppresses the occurrence of higher order modes and can reduce the loss of internal light. SOLUTION: The semiconductor laser device 30 includes; first and second conductivity-type cladding layers 32, 35; an active layer 34 formed between the cladding layers; and first and second light guide layers 33a, 33b formed between the first and second conductivity-type cladding layers and the active layer. In this case, at least one of the first and second conductivity-type cladding layers is light loss suppression regions 32a, 35a that are overlapped to the distribution of laser beams and prevent at least a partial region from being doped intentionally. COPYRIGHT: (C)2007,JPO&INPIT
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