发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To further reduce damage in substrate processing using a two fluid nozzle. SOLUTION: The substrate processing apparatus includes a binary fluid nozzle 2. The binary fluid nozzle 2 has a liquid discharge port 41, and an air discharge port 36 formed like a ring around the liquid discharge port 41. When pure water and nitrogen gas are introduced into the binary fluid nozzle 2, the pure water and the nitrogen gas are mixed after being respectively discharged from the liquid discharge port 41 and the air discharge port 36, and then are supplied as a droplet jet to a wafer W. The air discharge port 36 has an outside diameter (a) of 2 mm to 3.5 mm and a width (c) of 0.05 mm to 0.2 mm. A droplet density on the surface of the wafer W is not smaller than 10<SP>8</SP>/mm<SP>2</SP>per minute. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007227878(A) 申请公布日期 2007.09.06
申请号 JP20060294470 申请日期 2006.10.30
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 SHIMADA KUMIKO;SATO MASANOBU
分类号 H01L21/304 主分类号 H01L21/304
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