| 摘要 |
A plurality of origin patterns ( 3 ) containing a metal catalyst are formed over a semiconductor substrate ( 1 ). Next, an insulating film ( 4 ) covering the origin patterns ( 3 ) is formed. Next, a trench allowing at the both ends thereof the side faces of the origin patterns ( 3 ) to expose is formed. Thereafter, a wiring is formed by allowing carbon nanotubes ( 5 ) having a conductive chirality to grow in the trench. Thereafter, an insulating film covering the carbon nanotubes ( 5 ) is formed.
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