发明名称 Light Emitting Device and Method for Fabricating Light Emitting Device
摘要 It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
申请公布号 US2007205718(A1) 申请公布日期 2007.09.06
申请号 US20070745541 申请日期 2007.05.08
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;NAGAO RITSUKO;NAKAMURA YASUO
分类号 H01J1/62;H01J63/04;H01L27/32;H01L51/50;H01L51/52;H05B33/00 主分类号 H01J1/62
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