| 摘要 |
A nonvolatile semiconductor memory device having a first memory cell array including a plurality of electrically reprogrammable and erasable nonvolatile memory cells formed in a first area of a semiconductor substrate, a second memory cell array including a plurality of electrically reprogrammable and erasable nonvolatile memory cells formed in second area different from said first area of said semiconductor substrate, said first and second memory cell arrays being arranged in a first direction, a first page buffer block for storing data from said first memory cell array, said first page buffer block being arranged in said first memory cell array along a first direction, a second page buffer block for storing data from said second memory cell array, said second page buffer block being arranged in said second memory cell array along said first direction, a pad section for inputting data to and outputting data from said first memory cell array and said second memory cell array, said pad section having a plurality of pads arranged in an end of a semiconductor chip along a second direction perpendicular to said first direction, a first data line for supplying data from said first memory cell array to said pad section, said first data line being arranged in said first memory cell array along said first direction and a second data line for supplying data from said second memory cell array to said pad section, said second data line being arranged in said second memory cell array along said first direction over said first page buffer block.
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