NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PYRAMID STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要
A nitride semiconductor light emitting device having a pyramid structure and its fabricating method are provided to obtain easily a p-type nitride semiconductor layer having sufficient hall concentration in a light emitting portion of hexagonal pyramid structure. A p-type nitride semiconductor base layer(102) is formed on a substrate(101). A mask layer(103) having an opening is formed on the p-type nitride semiconductor. A light emitting portion(150) of a hexagonal pyramid structure is grown through the opening of the mask layer. The light emitting portion has a p-type nitride semiconductor crystal of hexagonal pyramid, an active layer(105) and an n-type nitride semiconductor layer.
申请公布号
KR100755610(B1)
申请公布日期
2007.09.06
申请号
KR20060088250
申请日期
2006.09.12
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
KIM, HAK HWAN;PARK, GIL HAN;YOO, SANG DUK;MIN, KYEONG IK;PARK, HEE SEOK;LEE, SANG BUM;JUNG, MYOUNG SIK;PARK, YOUNG MIN;PARK, KI TAE;CHOI, RAK JUN