| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein an insulating film for the dielectric film of a capacitor is acceleratingly oxidized and the thickness of the insulating film cannot reach a desired one easily in a conventional semiconductor device. <P>SOLUTION: In the semiconductor device, a silicon oxide film 41 for dielectric films in the capacitor 3 is formed on an n-type diffusion layer 40 for the lower electrode of the capacitor at the formation region of the capacitor 3. Polysilicon films 42, 43 for the upper electrode of the capacitor 3 are formed on the silicon oxide film 41. Then, the film thickness of the polysilicon film 42 is a film thickness for enabling impurities to pass in ion implantation. With this structure, the film thickness of the silicon oxide film 41 is within a desired range, thus improving the precision of the capacitance of the capacitor 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
