| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a data rewriting method improving deterioration in write and erasing speed when continuously rewriting data of a cross point type memory cell array of a variable resistance element of which the electric resistance is varied by applying electric stress, control of a resistance value of the variable resistance element after write and erasure is facilitated, and high reliability can be attained. <P>SOLUTION: When data is rewritten in order for a plurality of memory cells of a same row or a same column, a rewriting order of the plurality of memory cells to be rewritten is decided in accordance with length from an electric connecting point of a voltage applying circuit for rewriting applying voltage for rewriting data and the same wiring to respective selected memory cells and increasing and decreasing direction of the electric resistance of respective selected memory cells changed by data rewriting for a selected word line or a selected bit line of the same wiring connected to the selected memory cell to be rewritten, data is rewritten based on the decided rewriting order. <P>COPYRIGHT: (C)2007,JPO&INPIT |
