| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device free from exfoliation of a surface electrode caused by supersonic vibration applied during a bonding process. <P>SOLUTION: The semiconductor device has an interlayer film 4 formed on a surface of a semiconductor substrate 10 and a contact electrode 2 buried via barrier metal 3 in a contact hole 11 extending through the interlayer film 4, and extending to the surface or the inside of the semiconductor substrate 10; and is connected with a surface electrode 1 on the contact electrode 2. A recess 12 is formed on the surface of the interlayer film 4, and the film 4 and the surface electrode 1 are in direct contact in the recess 12. <P>COPYRIGHT: (C)2007,JPO&INPIT |
