| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element which enables light generated from an active layer to be emitted outside before it is absorbed and scattered inside the element and is reduced to a prescribed intensity or less by forming at least one mutually isolated groove by etching from a transparent electrode (or an ohmic layer) to a part of an n-type semiconductor layer, and can improve light extraction efficiency, and to provide its manufacturing method. <P>SOLUTION: The light emitting element is constituted by comprising a nitride semiconductor layer which is constituted of a first semiconductor layer (n-type nitride semiconductor layer) 120, an active layer 130 and a second semiconductor layer (p-type nitride semiconductor layer) 140 laminated one by one, and wherein a part of the first semiconductor layer 120 is exposed by carrying out mesa-etching from the second semiconductor layer 140 to a part of the first semiconductor layer 120, and at least one groove 180 which is formed passing through a part of the first semiconductor layer 120, the active layer 130 and the second semiconductor layer 140. <P>COPYRIGHT: (C)2007,JPO&INPIT |
