发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND WET PROCESSOR
摘要 PROBLEM TO BE SOLVED: To reduce damage against the surface of a semiconductor substrate in a wet processing. SOLUTION: A method for manufacturing a semiconductor device contains a process for supplying the rear of the semiconductor substrate 10 forming an element on a surface with first conductive chemicals 50. The manufacturing method further contains the process for supplying the surface of the semiconductor substrate 10 with second conductive chemicals 52, and conducting the wet processing after the process supplying the first chemicals 50 is started. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007227628(A) 申请公布日期 2007.09.06
申请号 JP20060046752 申请日期 2006.02.23
申请人 NEC ELECTRONICS CORP 发明人 SUZUKI TATSUYA
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
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