| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable optical semiconductor device which has a large emission intensity of TM mode light, and can easily and surely achieve polarization-independent optical amplification. SOLUTION: Each columnar dot 21 consists of seven or more layers of quantum dots 31 which are directly stacked. Between the columnar dots 21, there is a side barrier 22. Of side barrier layers 32 which constitute the side barrier 22, the side barrier layers 32 in a lower part (four layers from the lowest to the fourth layers from the bottom) are each formed as a first side barrier layer wherein tensile strain is introduced, while the side barrier layers 32 in an upper part (three layers from the fifth to the top layers from the bottom) are each formed as a strainless second side barrier layer. COPYRIGHT: (C)2007,JPO&INPIT
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