| 摘要 |
PROBLEM TO BE SOLVED: To form a member having a large heat capacity nearer a heating part in a semiconductor to restrain the temperature rise even against a temperature rise for a short time. SOLUTION: The semiconductor device IGBT 100 has trench gate regions G1-G6 and a high concentration n-type silicon layer 10n acting as an emitter region, a p-type silicon layer 11p acting as a p-base region, an n-type silicon layer 12n acting as an n-base region, and a high concentration p-type silicon layer 14p acting as a collector region. The high concentration n-type silicon layer 10n and the p-type silicon layer 11p are connected to an emitter electrode 21e and the high concentration p-type silicon layer 14p connected to a collector electrode 22c. Peltier elements P1, P2, P3 are formed between the gates G1 and G2, between the gates G3 and G4, and between the gates G5 and G6, respectively, and have a laminate structure of an n-type semiconductor silicon layer 15n (and a p-type silicon layer 16p not shown), a conductive member 25R, and a radiating member 26R through an insulation film 32P laminated and contacted in this order on a thin plate-like radiating buried metal 24. COPYRIGHT: (C)2007,JPO&INPIT |
