| 发明名称 |
Lateral Double-Diffused Mosfet (LDMOS) Transistor and a Method of Fabricating the Same |
| 摘要 |
Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described.
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| 申请公布号 |
US2007207600(A1) |
申请公布日期 |
2007.09.06 |
| 申请号 |
US20070681690 |
申请日期 |
2007.03.02 |
| 申请人 |
VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
YOU BUDONG;ZUNIGA MARCO A. |
| 分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
| 代理机构 |
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代理人 |
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| 主权项 |
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