| 摘要 |
A gate electrode ( 202 ) for a transistor including a metal gate structure ( 207 ) containing zirconium and a polycrystalline silicon cap ( 209 ) located there over. The metal gate structure ( 207 ) is located over a gate dielectric ( 205 ). The zirconium inhibits diffusion of silicon from the cap to the metal gate structure and gate dielectric. In one embodiment, the gate dielectric is a high K dielectric.
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