| 摘要 |
A stacked body which permits wiring of a driver IC chip to be recognized through an insulating layer, has strong adhesion between a conductor and the insulating layer and excellent electromigration resistivity, and to which fine processing, for example, that of a pitch of 30Vm or less, can be performed, and a method for manufacturing such stacked body. The stacked body for COF substrate is provided with the insulating layer composed of an insulating resin on one plane of the conductor composed of a conductive metal foil. In the stacked body, the conductor thickness is 1-8Vm, the surface roughness Rz of a plane touching the insulating layer of the conductor is 1.0Vm or less, and the surface roughness Rz of a plane not touching the insulating layer of the conductor is 1.0Vm or less. In the method for manufacturing the stacked body for COF substrate, the insulating layer is formed on the one plane of the conductive metal foil, which has a thickness of at least 10Vm and a surface roughness Rz of 1.0Vm or less on the one plane, a plane of the conductive metal foil not touching the insulating layer is chemically polished to have a conductive metal foil thickness of 1-8Vm and a surface roughness Rz of 1.0Vm or less to form the conductor. |
