发明名称 |
APPARATUS FOR PROCESSING SUBSTRATE WITH PLASMA |
摘要 |
A plasma processing apparatus is provided to prevent parasitic plasma from being generated between a transfer robot and a transfer chamber by preventing RF power from being transferred to the transfer chamber. A plasma processing apparatus is composed of a loadlock chamber, a transfer chamber and a process chamber(130). A gate valve(140) is installed between the chambers in a manner that controls a transfer of a substrate and an opening of each chamber. A ground member(148) is connected to the plasma processing apparatus to ground the gate valve. The ground member can have a structure in which the outer circumferential surface of an O-ring made of a conductive material is surrounded by a spiral ring made of a metal.
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申请公布号 |
KR20070090653(A) |
申请公布日期 |
2007.09.06 |
申请号 |
KR20060020614 |
申请日期 |
2006.03.03 |
申请人 |
ADP ENGINEERING CO., LTD. |
发明人 |
LEE, SEOUNG WOOK;HWANG, YOUNG JOO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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