发明名称 APPARATUS FOR PROCESSING SUBSTRATE WITH PLASMA
摘要 A plasma processing apparatus is provided to prevent parasitic plasma from being generated between a transfer robot and a transfer chamber by preventing RF power from being transferred to the transfer chamber. A plasma processing apparatus is composed of a loadlock chamber, a transfer chamber and a process chamber(130). A gate valve(140) is installed between the chambers in a manner that controls a transfer of a substrate and an opening of each chamber. A ground member(148) is connected to the plasma processing apparatus to ground the gate valve. The ground member can have a structure in which the outer circumferential surface of an O-ring made of a conductive material is surrounded by a spiral ring made of a metal.
申请公布号 KR20070090653(A) 申请公布日期 2007.09.06
申请号 KR20060020614 申请日期 2006.03.03
申请人 ADP ENGINEERING CO., LTD. 发明人 LEE, SEOUNG WOOK;HWANG, YOUNG JOO
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址