发明名称 SEMICONDUCTOR DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory which has a plurality of cores being sets of blocks to be used as units of data erasure, and enables concurrent execution of data write or erase operation in an arbitrary core, and of data read operation in other arbitrary cores. <P>SOLUTION: In a memory cell array 1, a plurality of cores are arranged, wherein a memory cell range used as a unit for data erasure is made one block, and a set of one or a plurality of blocks is made one core. It is equipped with a core selection means for selection of arbitrary number of cores to perform data writing/erasing, performs writing data to a selected memory cell in a selected core based on a write command, and performs data erase of the selected block in the selected core based on an erase command. A free core method which enables data read to the memory cell in the core which is not selected is realized, while data writing/erasing is performed to a selected core with a core selection means. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007226957(A) 申请公布日期 2007.09.06
申请号 JP20070062621 申请日期 2007.03.12
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 HONDA YASUHIKO;KATO HIDEO;SAITO SAKATOSHI;KURIYAMA MASAO;HARA NORIMASA;IKEDA HISAFUMI;HIRAMATSU TATSUYA
分类号 G11C16/02;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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