| 摘要 |
A light-detecting device, comprising: a semiconductor substrate 101 that is composed of silicon as a base material, and contains carbon at a predetermined concentration; and an epitaxial layer 102 that is formed on the semiconductor substrate 101 and composed of silicon as a base material, the epitaxial layer 102 including a light-detecting unit (mainly 104 ) a predetermined distance away from the semiconductor substrate 101 , wherein the semiconductor substrate 101 is formed using a crystal growth method from melt obtained by melting a material containing silicon and a material containing carbon so that carbon is contained in the semiconductor substrate 101 at the predetermined concentration.
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