GAS PHASE GROWTH METHOD OF NITRIDE GROUP SEMICONDUCTOR, NITRIDE GROUP SEMICONDUCTOR EXPITAXIAL SUBSTRATE USING THE SAME, SELF-STANDING SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a novel epitaxial growth method of increasing an epitaxial growth speed of a nitride group semiconductor by a MOVPE method.

SOLUTION: A growth speed of 10 μm/Hr or over is obtained by decreasing a V/III ratio under a prescribed condition by the MOVPE method, and this is applied to the growth of an a-plane nitride group semiconductor layer on an r-plane sapphire substrate so as to apply the growth method to a light emitting element and an electron transit element using the a-plane nitride group semiconductor.

COPYRIGHT: (C)2007,JPO&INPIT