| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an amorphous carbon film having high plasma resistance and capable of low temperature film formation, and to provide a method for producing a semiconductor device applying the method for forming an amorphous carbon film. SOLUTION: A substrate is arranged in a treatment vessel. A treatment gas comprising carbon, hydrogen and oxygen is fed into the treatment vessel. The substrate in the treatment vessel is heated to decompose the treatment gas, so that an amorphous carbon film is deposited on the substrate. This method is applied to the formation of an etching mask of a semiconductor device, thereby obtaining the semiconductor device. COPYRIGHT: (C)2007,JPO&INPIT
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