NONVOLATILE MEMORY DEVICE AND METHOD FOR FORMING THE SAME

摘要

A non-volatile memory device is provided to form a threshold voltage of a desired size and scattering by adjusting properly the size of a second semiconductor pattern even if a memory device is highly integrated. A semiconductor fin(135) includes a first semiconductor pattern(131) connected to a semiconductor substrate, a second semiconductor pattern(132) positioned on the first semiconductor pattern, a third semiconductor pattern(133) that is positioned between the first and the second semiconductor patterns to interconnect the first and the second semiconductor patterns. A charge storage layer is formed on the second semiconductor pattern by interposing a tunneling insulation layer(140). A gate electrode(175) is formed on the charge storage layer by interposing a blocking insulation layer(165). On the section in a direction of the gate electrode, the width of the second semiconductor fin is greater than that of the third semiconductor fin. A channel region and a source/drain region can be positioned in the second semiconductor pattern.