| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of obtaining a high-performance semiconductor device easily by preventing a via from being filled with an insulating film material completely for forming a void even if the density of the via is biased and preventing a film thickness from varying much. <P>SOLUTION: By using a method, wiring is formed in a semiconductor device for forming a prescribed insulating film on a substrate having the via of which via density differs depending on its position. The method includes first and second application processes. In the first application process, a paint for insulating films is applied after its viscosity is adjusted lower than that of the paint for insulating films used in a second application process to be described so that the paint for insulating films can be filled also into the via fully. In the second application process, the paint formed in the first application process is further coated with a paint film formed in the first application process adjusted to viscosity that is higher than that of the paint for insulating films used in the first application process and the paint for insulating films for composing a paint having the same or similar composition for eliminating variations in the thickness of the paint in positions other than the via position formed in the first application process. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
