| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu evaluating method in a silicon wafer, with which Cu concentration in the silicon wafer can precisely be detected with high sensitivity without a complicated process. SOLUTION: One face side of one silicon wafer 13a is polished between two evaluation silicon wafers 13a and 13b. It is heated to a prescribed temperature by using a hot plate 15. A heating process of the silicon wafer 13a is realized by heating the silicon wafer 13a for 5 to 60 minutes at a temperature range of 200 to 450°C by using the hot plate 15, for example. COPYRIGHT: (C)2007,JPO&INPIT
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