| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost/low loss semiconductor device having a pair of IGBT and diode connected in reverse parallel. SOLUTION: In a semiconductor device, the collector electrode of an IGBT is connected with the cathode electrode of a diode, and the emitter electrode of the IGBT is connected with the anode electrode of the diode. Following relation is satisfied VF<BVec when a current flowing through the diode has a predetermined value Id; where BVec is the breakdown voltage at the joint of the p-emitter layer 8 and the n-buffer layer 7 of the IGBT, and the VF is the forward voltage drop when the diode makes a transition from blocking state to conduction state. Maximum carrier concentration in the n-cathode layer 13 of the diode is higher than that in the n-buffer layer 7 of the IGBT. COPYRIGHT: (C)2007,JPO&INPIT
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