| 摘要 |
A double-gate thin-film transistor and a method for forming the same, using low-temperature poly-silicon formed by direct deposition on a substrate so as to simplify the manufacturing process and improve the electrical characteristics. The double-gate thin-film transistor comprises: a first patterned electrode formed on a substrate; a first dielectric layer; a poly-silicon film, formed by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; a pair of second patterned electrodes, formed on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; a second dielectric layer; and a third patterned electrode corresponding to the channel region. The method comprises steps of: providing a substrate, a first patterned electrode being formed on the substrate; forming a first dielectric layer; forming a poly-silicon film by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; forming a pair of second patterned electrodes on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; forming a second dielectric layer; and forming a third patterned electrode corresponding to the channel region.
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