发明名称 |
Semiconductor device, semiconductor wafer, and methods of producing same device and wafer |
摘要 |
A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si-H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.
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申请公布号 |
US2007207610(A1) |
申请公布日期 |
2007.09.06 |
申请号 |
US20070797293 |
申请日期 |
2007.05.02 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
USAMI TATSUYA |
分类号 |
C23C16/30;H01L21/4763;H01L21/312;H01L21/316;H01L21/318;H01L21/60;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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