| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of highly precisely performing a wafer-level burn-in and a probe test without increasing the number of probes. <P>SOLUTION: A power supply potential and a ground potential are supplied to a test-use power supply pad 303 and a test-use ground pad 313, respectively. The power supply potential supplied to the test-use power supply pad 303 is transferred to power supply lines 200, 201, 202, and then to each circuit block 100, 101, 102 via a test-use power supply line 203 and potential transfer circuits 420, 421, 422 including diode device 500, 501, 502. A voltage drop is caused by each of the diode devices 500-502. To cope with the voltage drop, however, respective sizes of the diode devices 500-502 and the resistance components of the potential transfer circuits 420-422 are configured so that a uniform voltage drop is generated at each of the power supply lines 200-202. Consequently, the wafer-level burn-in and the probe test are performed without causing a nonuniform voltage in a semiconductor circuit 10. <P>COPYRIGHT: (C)2007,JPO&INPIT |
