发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE MEMORY SYSTEM USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which automatically adjusts an initial writing voltage for each word line and a nonvolatile memory system using the same. <P>SOLUTION: The nonvolatile semiconductor storage device 1 includes a ROM fuse 11 and an adjustment circuit for obtaining a parameter of the initial writing voltage adjusted for each word line. The adjustment circuit is configured by a part of a control circuit 17. The ROM fuse 11 includes a region for storing a parameter of the adjusted initial writing voltage for each word line. The control circuit 17 writes data to a memory cell array 24 on the basis of information stored in the ROM fuse 11 and a data register 22. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007226936(A) 申请公布日期 2007.09.06
申请号 JP20060214203 申请日期 2006.08.07
申请人 TOSHIBA CORP 发明人 NAGASHIMA HIROYUKI;FUKUDA YASUYUKI
分类号 G11C16/06;G11C16/02;G11C16/04 主分类号 G11C16/06
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