发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE MEMORY SYSTEM USING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which automatically adjusts an initial writing voltage for each word line and a nonvolatile memory system using the same. <P>SOLUTION: The nonvolatile semiconductor storage device 1 includes a ROM fuse 11 and an adjustment circuit for obtaining a parameter of the initial writing voltage adjusted for each word line. The adjustment circuit is configured by a part of a control circuit 17. The ROM fuse 11 includes a region for storing a parameter of the adjusted initial writing voltage for each word line. The control circuit 17 writes data to a memory cell array 24 on the basis of information stored in the ROM fuse 11 and a data register 22. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2007226936(A) |
申请公布日期 |
2007.09.06 |
申请号 |
JP20060214203 |
申请日期 |
2006.08.07 |
申请人 |
TOSHIBA CORP |
发明人 |
NAGASHIMA HIROYUKI;FUKUDA YASUYUKI |
分类号 |
G11C16/06;G11C16/02;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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