| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal where the group III nitride crystal with a low dislocation density can be obtained and to provide a group III nitride crystal substrate obtained by the method. SOLUTION: The method for producing the group III nitride crystal is that the group III nitride crystal is grown, on the surface of a ground substrate, by the reaction of a raw material gas containing at least a kind of gases selected from the group consisting of a gallium halide gas, an indium halide gas and an aluminum halide gas, and ammonia gas, in a quartz reaction tube. The method for producing the group III nitride crystal where the temperature of the ground substrate is changed during the growth of the group III nitride crystal, and the group III nitride crystal substrate obtained by the method are provided. COPYRIGHT: (C)2007,JPO&INPIT
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