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发明名称
Herstellungsverfahren für integrierten Schaltkreis mit MOS-Transistoren von hoher Durchbruchspannung und mit Präzisionswiderständen
摘要
申请公布号
DE69737947(D1)
申请公布日期
2007.09.06
申请号
DE19976037947
申请日期
1997.05.20
申请人
STMICROELECTRONICS S.R.L., AGRATE BRIANZA
发明人
STUCCHI, ELENA;DAFFRA, STEFANO;CEREDA, MANLIO SERGIO
分类号
H01L21/00;H01L27/04;H01L21/02;H01L21/329;H01L21/822;H01L21/8234;H01L27/06;H01L29/8605
主分类号
H01L21/00
代理机构
代理人
主权项
地址
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