发明名称 |
NON-VOLATILE STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile storage device having realization of reduction in size and mass-productivity while acquiring reliability and signal transmitting performance. <P>SOLUTION: The non-volatile memory chip having a first side where a pad is not formed and a second side where a pad is formed is mounted on a mounting substrate. A control chip for controlling the non-volatile memory chip is mounted on the same non-volatile memory chip. The control chip has a first pad line corresponding to the pad of the non-volatile memory chip. This first pad line is provided in proximity to the first side of the non-volatile memory chip. The first pad line of the control chip is connected to a first electrode line formed on the mounting substrate via a first wire group. The pad of the non-volatile memory chip and a second electrode line formed on the mounting substrate are connected via a second wire group. The first electrode line and the second electrode lie are connected via a wiring formed on the mounting substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007227537(A) |
申请公布日期 |
2007.09.06 |
申请号 |
JP20060045463 |
申请日期 |
2006.02.22 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
HANAWA KAZUKO;KIKUCHI TAKU;KANEMOTO KOICHI;SUGIYAMA MICHIAKI;IMURA CHIKAKO |
分类号 |
H01L25/18;H01L21/8247;H01L25/065;H01L25/07;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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