Magnetoresistives Element,Speicherelement mit dieses magnetoresistiven Element,und Aufnahme/Wiedergabe-Verfahren für das Speicherelement

摘要

A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed.