发明名称 |
Lateralhalbleiterbauelement |
摘要 |
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer. |
申请公布号 |
DE10120030(B4) |
申请公布日期 |
2007.09.06 |
申请号 |
DE2001120030 |
申请日期 |
2001.04.24 |
申请人 |
FUJI ELECTRIC CO. LTD. |
发明人 |
ONISHI, YASUHIKO;FUJIHARA, TATSUHIKO;IWAMOTO, SUSUMU;SATO, TAKAHIRO |
分类号 |
H01L29/06;H01L29/10;H01L29/739;H01L29/78;H01L29/861 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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