| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve the large-scale mass production of phase change memory devices by suppressing heat discharge from both of upper and lower side metals in a phase change area in a memory cell of a phase change memory device, and minimizing the reduction of heat efficiency. <P>SOLUTION: Heat discharge from a lower side contact plug of a phase change layer is suppressed by adopting a different material contact plug 104. Namely, heat discharge is suppressed by connecting a heater electrode 110 to a first conductive material plug 106 composed of a first conductive material of which the specific resistance is larger than that of a second conductive material (inversely, heat conductivity is smaller). Heat discharge from the upper side electrode of the phase change layer is suppressed by adopting electrode structure which adopts an extracting electrode 116 but does not arrange the electrode 116 just above the phase change area (vicinity of the upper surface 112 of the heater electrode 110). <P>COPYRIGHT: (C)2007,JPO&INPIT |
