| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of wafer with high crystal orientation accuracy by forming a surface hard to etch by performing anisotropy wet-etching. SOLUTION: In the manufacturing method of wafer, the crystal orientation accuracy of orientation flat is improved by processing only an orientation flat end surface of ingot formed by cutting the orientation flat mechanically or wafer formed by slicing the orientation flat, in a wet-etching with an anisotropy wet-etching liquid suitable for a material of the wafer and an orientation flat direction desired to be used. COPYRIGHT: (C)2007,JPO&INPIT
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