| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of restraining electric characteristics from lowering and threshold voltage from varying owing to ion injection. SOLUTION: The semiconductor device comprises a pair of source/drain regions 4 formed on a substrate 1 so as to sandwich a channel region 3, and a gate electrode 6 formed on the channel region 3 via a gate insulating film 5. The gate electrode 6 comprises a metal containing layer 7, a metal containing layer 9 formed on the metal containing layer 7, and a polysilicon layer 8 formed between the metal containing layer 7 and the metal containing layer 9. COPYRIGHT: (C)2007,JPO&INPIT
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