| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer which can prevent spread of contamination over a semiconductor wafer, and to provide the semiconductor wafer. SOLUTION: In the method of manufacturing the semiconductor wafer 51, an element isolation layer 12 for separating an SOI forming region 13 and a bulk forming region is first formed. Then, a resist film 18 for removing a silicon oxide film 14 on the SOI forming region 13 is formed. In this case, since a peripheral rinsing or peripheral exposure is not applied to the resist film on a peripheral portion 11b of the silicon substrate 11, the element isolation layer 12 of the peripheral portion 11b remains. After that, a silicon germanium layer 15 and a silicon layer 16 are formed by selective epitaxial growth on only the SOI forming region 13 where a surface 11a is exposed. Since the silicon germanium layer 15 is not formed on the peripheral portion 11b, a transfer system can be prevented from contacting the silicon germanium layer 15 causing contamination, although it contacts the peripheral portion 11b. COPYRIGHT: (C)2007,JPO&INPIT
|
