METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To protect carbon from separation from the exposed surface of a recess area due to the plasma used for the ashing when such ashing of a resist film at the upper part of a SiOCH film is conducted to a wafer having the SiOCH film to which the recess area is formed by the etching process. SOLUTION: A protection film for protecting an exposed area of the recess area of the SiOCH film is deposited from the plasma used for the ashing, by converting the CH4gas into the plasma before the ashing process and then depositing a sediment to the exposed area of the recess area of the SiOCH film using the plasma. COPYRIGHT: (C)2007,JPO&INPIT