发明名称 |
Method of forming an MOS transistor and structure therefor |
摘要 |
In one embodiment, an MOS transistor is formed with trench gates. The gate structure of the trench gates generally has a first insulator that has a first thickness in one region of the gate and a second thickness in a second region of the gate.
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申请公布号 |
US2007207582(A1) |
申请公布日期 |
2007.09.06 |
申请号 |
US20060367627 |
申请日期 |
2006.03.06 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. |
发明人 |
GRIVNA GORDON M.;ROBB FRANCINE Y. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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